Xilinx delivers 58G serdes and showcases a 112G test chip
In the first of two articles, electrical input-output developments are discussed, focussing on Xilinx’s serialiser-deserialiser (serdes) work for its programmable logic chips. In Part 2, the Imec nanoelectronics R&D centre’s latest silicon photonics work to enable optical I/O for chips is detailed.
Part 1: Electrical I/O
Processor and memory chips continue to scale exponentially. The electrical input-output (I/O) used to move data on and off such chips scales less well. Electrical interfaces are now transitioning from 28 gigabit-per-second (Gbps) to 56Gbps and work is already advanced to double the rate again to 112Gbps. But the question as to when electrical interfaces will reach their practical limit continues to be debated.
“Some two years ago, talking to the serdes community, they were seeing 100 gigabits as the first potential wall,” says Gilles Garcia, communications business lead at Xilinx. “In two years, a lot of work has happened and we can now demonstrate 112 gigabits [electrical interfaces].”
The challenge of moving to higher-speed serdes is that the reach shortens with each doubling of speed. The need to move greater amounts of data on- and off-chip also has power-consumption implications, especially with the extra circuitry needed when moving from non-return-to-zero signalling to the more complex 4-level pulse-amplitude modulation (PAM-4) signalling scheme.
PAM-4 is already used for 56-gigabit electrical I/O for such applications as 400 Gigabit Ethernet optical modules and leading edge 12.8-terabit switch chips. Having 112-gigabit serdes at least ensures one further generation of switch chips and optical modules but what comes after that is still to be determined. Even if more can be squeezed out of copper, the trace lengths will shorten and optics will continue to get closer to the chip.
58-gigabit serdes
Xilinx announced in March its first two Virtex Ultrascale+ FPGAs that will feature 58Gbps serdes. The company also demonstrated the technology at the OFC show. “No one else on the show floor had the same [58G serdes] capabilities in terms of bit error rate, noise floor, the demonstration across backplane technology, and transmitting and receiving data simultaneously,” says Garcia.
The two FPGAs are the VU27P that features 32 of the 58Gbps serdes as well as 32, 33Gbps serdes, while the second device, the VU29P, has 48, 58Gbps serdes as well as 32, 33Gbps ones. Both FPGA devices will ship by the year-end, says Xilinx. Moreover, customers have already used Xilinx’s 58Gbps test chip to validate its working over their systems’ backplanes in preparation for the arrival of the FPGAs.
No one else on the show floor had the same [58G serdes] capabilities in terms of bit error rate, noise floor, the demonstration across backplane technology, and transmitting and receiving data simultaneously
The Ultrascale+ FPGAs are constructed using several dice attached to a single silicon interposer to form a 2.5D chip design, what Xilinx calls its stacked silicon interconnect technology. The 58Gbps serdes are integrated into each FPGA slice. “Consider each slice as a monolithic implementation,” says Garcia.
The two FPGAs with 58Gbps serdes are suited for such telecom applications as next-generation router and packet optical line cards that will use 200-gigabit and 400-gigabit client-side optical modules. The VU29P with its 48, 58Gbps serdes will be able to support line cards with up to six QSFP-DD or OSPF 400 Gigabit Ethernet modules (see the diagram of an example line card).
112-gigabit test chip
Xilinx also showcased its 112Gbps serdes test chip at the OFC show in March. “What we showed was it operating in full duplex mode - transmitting and receiving - running on the same board as the 58-gigabit serdes,” says Garcia. “The point being the 112-gigabit demo worked on a printed circuit board not designed for a 112-gigabit serdes.”
Xilinx stresses that the 112-gigabit serdes will appear on its next generation of FPGA devices implemented using a 7nm CMOS process. “It [the FPGA portfolio] will coincide with when the market needs 112 gigabits,” he says.
One obvious market indicator will be the emergence of optical modules that use electrical lanes operating at 112 gigabits. “The holy grail of optical modules is to use four [electrical] lanes for 400 gigabits,” says Garcia. The IEEE is working on such a specification and the work is expected to be completed at the end of 2019. Optical module vendors will likely have first samples in 2020. Then there is the separate timeline associated with next-generation 25.6-terabit switch chips.
“You need to have the full ecosystem before customers really implement 112Gbps serdes,” says Garcia.
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